OM6233SS by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	OM6233SS
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
Datasheet	OM6233SS Datasheet
In Stock	150

NAME	DESCRIPTION
Package Body Material:	METAL
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	10 A
Maximum Pulsed Drain Current (IDM):	30 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	6
Maximum Power Dissipation (Abs):	165 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-MSFM-P6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	PIN/PEG
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	1.3 ohm
Avalanche Energy Rating (EAS):	500 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	1000 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY
Maximum Drain Current (Abs) (ID):	10 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
150	-	-

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