OMD100V by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	OMD100V
Description	N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Terminal Position: DUAL; JESD-30 Code: R-MDFM-F12;
In Stock	553

NAME	DESCRIPTION
Package Body Material:	METAL
Configuration:	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	25 A
Maximum Pulsed Drain Current (IDM):	100 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	12
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-MDFM-F12
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Additional Features:	HIGH RELIABILITY
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.08 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
553	-	-

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