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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | OMD200T |
Description | N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; No. of Elements: 4; Package Shape: RECTANGULAR; |
In Stock | 266 |
NAME | DESCRIPTION |
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Package Body Material: | METAL |
Configuration: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 25 A |
Maximum Pulsed Drain Current (IDM): | 80 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | TIN LEAD |
JESD-609 Code: | e0 |
No. of Terminals: | 12 |
Minimum DS Breakdown Voltage: | 200 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-MDFM-F12 |
No. of Elements: | 4 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | HIGH RELIABILITY |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | .11 ohm |