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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | OMS305 |
| Description | N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 15 A; |
| Datasheet | OMS305 Datasheet |
| In Stock | 956 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 15 A |
| Maximum Pulsed Drain Current (IDM): | 56 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 34 |
| Maximum Power Dissipation (Abs): | 20 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PDFM-T34 |
| No. of Elements: | 6 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | .1 ohm |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum DS Breakdown Voltage: | 50 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 15 A |
