P2000DL45X168 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	P2000DL45X168
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: ROUND; Terminal Form: UNSPECIFIED;
Datasheet	P2000DL45X168 Datasheet
In Stock	847

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	2460 ns
No. of Terminals:	4
Maximum Collector-Emitter Voltage:	4500 V
Terminal Position:	UNSPECIFIED
Nominal Turn On Time (ton):	580 ns
Package Style (Meter):	DISK BUTTON
JESD-30 Code:	O-XXDB-X4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	2.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
847	-	-

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IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.