Infineon Technologies - PTAC210802FC-80W

  1. Home
  2. Infineon Technologies - PTAC210802FC-80W
PTAC210802FC-80W by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTAC210802FC-80W
Description RF Power Field-Effect Transistors;
Datasheet PTAC210802FC-80W Datasheet
In Stock301
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
301 - -

Popular Products

Category Top Products

934065223112 by NXP Semiconductors

934065223112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Terminals: 4; Terminal Position: DUAL; No. of Elements: 2;
MRF171A by M/a-com Technology Solutions

MRF171A

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Maximum Operating Temperature: 200 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
CLF1G0035-100 by NXP Semiconductors

CLF1G0035-100

NXP Semiconductors

RF Power Field-Effect Transistors;
MRF1570FNT1 by Motorola

MRF1570FNT1

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified;
NE5550234-AZ by Renesas Electronics

NE5550234-AZ

Renesas Electronics

NE5550234-AZ by Renesas Electronics is a N-CHANNEL RF Power FET with 0.6A max drain current and 12.5W max power dissipation. It utilizes METAL-OXIDE SEMICONDUCTOR technology, suitable for applications requiring high-power amplification in surface-mount configurations up to 150°C operating temperature.
CG2H40035F by Wolfspeed

CG2H40035F

Wolfspeed

CG2H40035F by Wolfspeed is a N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 84V and a min Power Gain (Gp) of 13.5dB. It is commonly used as an amplifier in C Band applications.
BLF6G15L-40BRN by NXP Semiconductors

BLF6G15L-40BRN

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: QUAD; Transistor Application: AMPLIFIER;
PD55003-01 by STMicroelectronics

PD55003-01

STMicroelectronics

PD55003-01 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 40V min breakdown voltage, operates at ultra-high frequencies, and supports a max drain current of 2.5A. Ideal for compact surface mount designs, it excels in high-temperature environments up to 150 °C.
AFT05MP075NR1 by NXP Semiconductors

AFT05MP075NR1

NXP Semiconductors

NXP Semiconductors' AFT05MP075NR1 is an N-CHANNEL RF Power FET with 690W power dissipation. It features METAL-OXIDE SEMICONDUCTOR tech, operates up to 225°C, and is surface mountable. Ideal for high-power RF applications in various industries.
D1028UK by Tt Electronics Plc

D1028UK

Tt Electronics Plc

D1028UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. The package is RECTANGULAR, METAL-OXIDE SEMICONDUCTOR technology, and can withstand up to 200°C operating temperature.
934066857112 by NXP Semiconductors

934066857112

NXP Semiconductors

NXP Semiconductors' 934066857112 is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It features COMMON SOURCE configuration, suitable for SWITCHING applications in L BAND frequency range. The transistor is METAL-OXIDE SEMICONDUCTOR technology based and comes in a FLATPACK package style for surface mount installation.
PD57018S-E by STMicroelectronics

PD57018S-E

STMicroelectronics

PD57018S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2.5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface mount device ensures efficient performance with a max power dissipation of 31.7 W.
CLF1G0035-50 by Ampleon Netherlands B V

CLF1G0035-50

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Case Connection: SOURCE;
FLL177ME by Fujitsu

FLL177ME

Fujitsu

Fujitsu FLL177ME is an N-CHANNEL RF Power FET with 15V DS Breakdown Voltage, ideal for AMPLIFIER applications in L BAND. Featuring DEPLETION MODE operation, it offers 7.5W Max Power Dissipation at 175°C max temp, housed in a CERAMIC/METAL-SEALED COFIRED package with FLANGE MOUNT style.
BLF6G27S-45 by Ampleon Netherlands B V

BLF6G27S-45

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; No. of Elements: 1; Highest Frequency Band: S BAND;
FLU35XM by Fujitsu

FLU35XM

Fujitsu

FLU35XM by Fujitsu is a N-CHANNEL RF FET with 15V DS Breakdown Voltage, operating in DEPLETION MODE. Ideal for L BAND applications, it features 15W Power Dissipation, GALLIUM ARSENIDE technology, and can withstand up to 175°C.
SD56120 by STMicroelectronics

SD56120

STMicroelectronics

SD56120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications, featuring a max drain current of 14 A and a breakdown voltage of 65 V. It operates in enhancement mode within the ultra-high frequency band. This surface-mount device offers high power dissipation up to 217 W, ideal for demanding RF applications.
934061137118 by NXP Semiconductors

934061137118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Minimum DS Breakdown Voltage: 65 V;
PD57030S by STMicroelectronics

PD57030S

STMicroelectronics

PD57030S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
TIM5964-35SLA-422 by Toshiba

TIM5964-35SLA-422

Toshiba

Toshiba's TIM5964-35SLA-422 is an N-channel RF Power FET with a ceramic-metal-sealed co-fired package. Operating in depletion mode, it has a max drain current of 20A and can handle up to 115.4W power dissipation. Ideal for amplifier applications in the C band due to its high-frequency capabilities and source case connection.