NXP Semiconductors - A3T23H300W23SR6

  1. Home
  2. NXP Semiconductors - A3T23H300W23SR6
A3T23H300W23SR6 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number A3T23H300W23SR6
Description RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
Datasheet A3T23H300W23SR6 Datasheet
In Stock1,132
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 40
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,132 $83.360 $94,363.520

Popular Products

Category Top Products

SD2923 by STMicroelectronics

SD2923

STMicroelectronics

SD2923 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, a breakdown voltage of 125 V, and can dissipate up to 648 W. Ideal for high-performance RF amplification in various electronic devices.
ST24180 by STMicroelectronics

ST24180

STMicroelectronics

RF Power Field-Effect Transistors;
934062175112 by NXP Semiconductors

934062175112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; No. of Elements: 1; Transistor Element Material: SILICON;
MRFE6VP100HSR5 by Freescale Semiconductor

MRFE6VP100HSR5

Freescale Semiconductor

N-CHANNEL; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 150 Cel;
CGHV96050F2 by Wolfspeed

CGHV96050F2

Wolfspeed

Wolfspeed's CGHV96050F2 is an N-CHANNEL RF Power FET for X BAND applications. Features include 100V DS Breakdown Voltage, 10dB Power Gain, and 6A Drain Current. Ideal for AMPLIFIER use with HIGH ELECTRON MOBILITY GaN technology, operating from -40°C to 125°C in a FLANGE MOUNT package.
MRF151G by Tyco Electronics M/a-com

MRF151G

Tyco Electronics M/a-com

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Additional Features: HIGH RELIABILITY; Transistor Element Material: SILICON; No. of Elements: 2;
BLP15H9S100GZ by Ampleon Netherlands B V

BLP15H9S100GZ

Ampleon Netherlands B V

BLP15H9S100GZ by Ampleon Netherlands B V is an N-CHANNEL RF FET with 106V DS Breakdown Voltage and 18dB Power Gain, ideal for AMPLIFIER applications in L BAND. It features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and operates in ENHANCEMENT MODE up to 225°C.
TSD2922 by STMicroelectronics

TSD2922

STMicroelectronics

TSD2922 by STMicroelectronics is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V. Operating in the Ultra High Frequency Band, it has a max temperature of 200 °C. This transistor is commonly used in applications requiring high power and frequency performance, such as telecommunications and radar systems.
RF5L0912750CB4 by STMicroelectronics

RF5L0912750CB4

STMicroelectronics

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);
MRF6V2150NR1 by NXP Semiconductors

MRF6V2150NR1

NXP Semiconductors

NXP Semiconductors' MRF6V2150NR1 is a single N-channel RF Power FET for amplifier applications. Operating in enhancement mode, it offers a max temperature of 225°C and operates in the ultra-high frequency band. With a plastic/epoxy package body material, it features a rectangular shape and flat terminal form for surface mount applications.
MRF151 by Tyco Electronics M/a-com

MRF151

Tyco Electronics M/a-com

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Drain Current (ID): 16 A; Additional Features: HIGH RELIABILITY;
FLU35XM by Eudyna Devices

FLU35XM

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Operating Mode: DEPLETION MODE; No. of Terminals: 4;
934061174112 by NXP Semiconductors

934061174112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
CGHV59350F by Wolfspeed

CGHV59350F

Wolfspeed

CGHV59350F by Wolfspeed is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V and a Power Gain of 11.5 dB, ideal for amplifier applications in the C BAND frequency range. This HIGH ELECTRON MOBILITY transistor operates in DEPLETION MODE, with a max Drain Current of 24A and can withstand temperatures from -40 to 125 °C.
MRFE6VP6300HR3 by Freescale Semiconductor

MRFE6VP6300HR3

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Peak Reflow Temperature (C): 260; Case Connection: SOURCE;
A2T07D160W04SR3 by NXP Semiconductors

A2T07D160W04SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MRF136 by Motorola

MRF136

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 200 Cel; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;
AFT20P060-4NR3 by Freescale Semiconductor

AFT20P060-4NR3

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: Matte Tin (Sn);
PD54008-E-E by STMicroelectronics

PD54008-E-E

STMicroelectronics

PD54008-E-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
A5G35S008NT6 by NXP Semiconductors

A5G35S008NT6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;