Image shown is a representation only.
| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | LET19060C |
| Description | N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; No. of Terminals: 2; Transistor Application: AMPLIFIER; |
| Datasheet | LET19060C Datasheet |
| In Stock | 2,700 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | COMMON SOURCE, 2 ELEMENTS |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | 7 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Minimum DS Breakdown Voltage: | 65 V |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 130 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PDFM-F2 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 200 Cel |
| Maximum Drain Current (Abs) (ID): | 7 A |
| Case Connection: | SOURCE |
