Image shown is a representation only.
| Manufacturer | Microchip Technology |
|---|---|
| Manufacturer's Part Number | VRF157FL |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 170 V; |
| Datasheet | VRF157FL Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | 60 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Terminals: | 2 |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-CDFM-F2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 200 Cel |
| Case Connection: | SOURCE |
| Maximum Feedback Capacitance (Crss): | 65 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e1 |
| Minimum DS Breakdown Voltage: | 170 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 60 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |









