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Manufacturer | Freescale Semiconductor |
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Manufacturer's Part Number | MRF6V2150NR1 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 110 V; Qualification: Not Qualified; |
Datasheet | MRF6V2150NR1 Datasheet |
In Stock | 55 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 40 |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Sub-Category: | FET General Purpose Powers |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) |
No. of Terminals: | 4 |
Terminal Position: | DUAL |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PDFM-F4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
Maximum Operating Temperature: | 225 Cel |
Case Connection: | SOURCE |
Moisture Sensitivity Level (MSL): | 3 |
JEDEC-95 Code: | TO-270 |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 110 V |
Qualification: | Not Qualified |
Peak Reflow Temperature (C): | 260 |