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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | SD57060-01 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; |
| Datasheet | SD57060-01 Datasheet |
| In Stock | 1,776 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | 7 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLATPACK |
| JESD-30 Code: | R-PDFP-F2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 200 Cel |
| Case Connection: | SOURCE |
| Other Names: |
1026-SD57060-01 SD5706001 SD57060-01-ND 497-5480 |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 65 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 7 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |









