
Image shown is a representation only.
Manufacturer | STMicroelectronics |
---|---|
Manufacturer's Part Number | LET9060 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 80 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; |
Datasheet | LET9060 Datasheet |
In Stock | 702 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | 12 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 2 |
Minimum DS Breakdown Voltage: | 80 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | HIGH RELIABILITY |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
Case Connection: | SOURCE |
Peak Reflow Temperature (C): | NOT SPECIFIED |