NXP Semiconductors - BLF246

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BLF246 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF246
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Minimum DS Breakdown Voltage: 65 V; Minimum Power Gain (Gp): 16 dB;
Datasheet BLF246 Datasheet
In Stock862
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 13 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 4
Maximum Power Dissipation (Abs): 130 W
Terminal Position: RADIAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-CRFM-F4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 130 W
Maximum Drain-Source On Resistance: .3 ohm
Moisture Sensitivity Level (MSL): NOT APPLICABLE
Minimum Power Gain (Gp): 16 dB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Additional Features: LOW NOISE
Maximum Drain Current (Abs) (ID): 13 A
Peak Reflow Temperature (C): NOT SPECIFIED
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