Infineon Technologies - PTAC210802FCV1

  1. Home
  2. Infineon Technologies - PTAC210802FCV1
PTAC210802FCV1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTAC210802FCV1
Description RF Power Field-Effect Transistors;
Datasheet PTAC210802FCV1 Datasheet
In Stock330
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
330 - -

Popular Products

Category Top Products

NE5550234-T1-AZ by Renesas Electronics

NE5550234-T1-AZ

Renesas Electronics

NE5550234-T1-AZ by Renesas Electronics is a N-CHANNEL RF FET with 0.6A max drain current and 12.5W max power dissipation. It utilizes METAL-OXIDE SEMICONDUCTOR tech, operates up to 150°C, ideal for RF power applications requiring high efficiency and reliability in surface mount configurations.
STAC1011-350 by STMicroelectronics

STAC1011-350

STMicroelectronics

STAC1011-350 by STMicroelectronics is a N-channel RF FET with 80V DS breakdown voltage. It operates in enhancement mode for L band applications, featuring a plastic/epoxy package and flat terminals. Ideal for amplifier circuits, this single configuration transistor is surface mountable with source connection in a rectangular flange mount package.
MRF1518NT1 by NXP Semiconductors

MRF1518NT1

NXP Semiconductors

NXP Semiconductors' MRF1518NT1 is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with 40V DS breakdown voltage and 4A drain current. With a max power dissipation of 62.5W, it is designed for ultra-high frequency band usage.
VRF2933 by Microsemi

VRF2933

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: ROUND; Terminal Form: FLAT; Qualification: Not Qualified;
MRFE6VP5300NR1 by NXP Semiconductors

MRFE6VP5300NR1

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN;
A2T18S262W12NR3 by NXP Semiconductors

A2T18S262W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
A2T08VD020NT1 by NXP Semiconductors

A2T08VD020NT1

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Terminal Finish: TIN; Case Connection: SOURCE; Moisture Sensitivity Level (MSL): 3;
A2V09H525-04NR6 by NXP Semiconductors

A2V09H525-04NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; JESD-609 Code: e3;
CGHV40030F by Wolfspeed

CGHV40030F

Wolfspeed

CGHV40030F by Wolfspeed is an N-CHANNEL RF Power FET with a 150V DS Breakdown Voltage and 15dB Power Gain, ideal for AMPLIFIER applications in C BAND. Featuring GALLIUM NITRIDE technology, it operates from -40 to 85 °C with a max ID of 4.2A and 0.15pF Crss for high-performance needs.
PD60030 by STMicroelectronics

PD60030

STMicroelectronics

PD60030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V min DS breakdown voltage, operates in enhancement mode, and supports L band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
934065232118 by NXP Semiconductors

934065232118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Package Style (Meter): FLATPACK;
MRF6VP121KHR5 by Freescale Semiconductor

MRF6VP121KHR5

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 110 V;
QPD1008L by Qorvo

QPD1008L

Qorvo

Qorvo's QPD1008L is a single N-channel RF FET with GaN technology, operating in S band. It features a ceramic-metal sealed co-fired package for high electron mobility, suitable for amplifier applications. With a max temperature of 85°C and dual terminal position, it offers reliable performance in various environments.
A2T20H160W04NR3 by NXP Semiconductors

A2T20H160W04NR3

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Package Body Material: PLASTIC/EPOXY;
MRF181ZR1 by Onsemi

MRF181ZR1

Onsemi

MRF181ZR1 by Onsemi is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band and has a max Drain Current of 2A, making it ideal for amplifier applications. The transistor features a CERAMIC, METAL-SEALED COFIRED package with GULL WING terminals for surface mount installation.
AFT26H250-24SR6 by Freescale Semiconductor

AFT26H250-24SR6

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Operating Temperature: 225 Cel;
A2T21S161W12SR3 by NXP Semiconductors

A2T21S161W12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
PD54003S-E by STMicroelectronics

PD54003S-E

STMicroelectronics

PD54003S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance up to 165 °C.
CGH31240F by Wolfspeed

CGH31240F

Wolfspeed

CGH31240F by Wolfspeed is a N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, featuring Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, it comes in a ceramic, metal-sealed co-fired package with flange mount style.
934065696112 by NXP Semiconductors

934065696112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLATPACK; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFP-F4;