Infineon Technologies - PTFA091201F-120W

  1. Home
  2. Infineon Technologies - PTFA091201F-120W
PTFA091201F-120W by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTFA091201F-120W
Description RF Power Field-Effect Transistors;
Datasheet PTFA091201F-120W Datasheet
In Stock514
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
514 - -

Popular Products

Category Top Products

MMRF1014NT1 by Freescale Semiconductor

MMRF1014NT1

Freescale Semiconductor

N-CHANNEL; Surface Mount: YES; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE; Terminal Position: QUAD; Terminal Finish: MATTE TIN;
MRF151 by Motorola

MRF151

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 200 Cel; JESD-30 Code: O-CRFM-F4;
AFT09H310-03SR6 by NXP Semiconductors

AFT09H310-03SR6

NXP Semiconductors

NXP Semiconductors' AFT09H310-03SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-frequency applications in various industries.
TSD2903 by STMicroelectronics

TSD2903

STMicroelectronics

TSD2903 by STMicroelectronics is an N-CHANNEL RF Power FET with a 60V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, with a max Drain Current of 3.9A, making it ideal for amplifier applications in enhancement mode.
PD57030-E by STMicroelectronics

PD57030-E

STMicroelectronics

STMicroelectronics PD57030-E is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 4A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features ENHANCEMENT MODE operation, GULL WING terminals, and a max power dissipation of 52.8W.
MRF1511NT1 by NXP Semiconductors

MRF1511NT1

NXP Semiconductors

NXP Semiconductors' MRF1511NT1 is a N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 4A Drain Current. Ideal for amplifier applications in the VHF band, it features a max power dissipation of 62.5W in a small outline package with source connection and tin terminal finish.
PD85035C by STMicroelectronics

PD85035C

STMicroelectronics

PD85035C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications, featuring a max drain current of 8 A and a breakdown voltage of 40 V. It operates in the ultra-high frequency band with a power dissipation of up to 108 W. Its ceramic, metal-sealed package ensures durability in demanding environments.
STAC3932F by STMicroelectronics

STAC3932F

STMicroelectronics

STAC3932F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 20 A, a breakdown voltage of 250 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 625 W.
MRF300AN by NXP Semiconductors

MRF300AN

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
CGHV59350F by Wolfspeed

CGHV59350F

Wolfspeed

CGHV59350F by Wolfspeed is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V and a Power Gain of 11.5 dB, ideal for amplifier applications in the C BAND frequency range. This HIGH ELECTRON MOBILITY transistor operates in DEPLETION MODE, with a max Drain Current of 24A and can withstand temperatures from -40 to 125 °C.
FLL57MK by Fujitsu Semiconductor America

FLL57MK

Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 15 V; No. of Elements: 1; Operating Mode: DEPLETION MODE;
MRFX1K80NR5 by NXP Semiconductors

MRFX1K80NR5

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
PD55003L-E by STMicroelectronics

PD55003L-E

STMicroelectronics

STMicroelectronics PD55003L-E is an N-CHANNEL RF FET with 40V DS breakdown voltage, ideal for amplifier applications in the UHF band. It operates in enhancement mode, with a max drain current of 2.5A and power dissipation of 14W. The chip carrier package style and matte tin terminal finish make it suitable for high-frequency circuit designs.
CGH40180PP by Wolfspeed

CGH40180PP

Wolfspeed

CGH40180PP by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the S BAND frequency range and features Gallium Nitride technology. Ideal for amplifier applications, this transistor has a ceramic-metal-sealed co-fired package and is surface mountable.
933817030112 by NXP Semiconductors

933817030112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V;
A2I25D025GNR1 by NXP Semiconductors

A2I25D025GNR1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260;
AFT09MP055GNR1 by NXP Semiconductors

AFT09MP055GNR1

NXP Semiconductors

N-CHANNEL; Maximum Power Dissipation (Abs): 625 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3;
LET9006 by STMicroelectronics

LET9006

STMicroelectronics

LET9006 by STMicroelectronics is an N-channel RF power FET designed for amplification in ultra-high frequency applications. It features a 65V breakdown voltage, 1A max drain current, and operates at up to 150 °C. Its compact no-lead package ensures efficient surface mounting.
STAC2933 by STMicroelectronics

STAC2933

STMicroelectronics

STAC2933 by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 795W max power dissipation. Ideal for high-power applications, it operates at up to 200 °C. Suitable for surface mount configurations, this METAL-OXIDE SEMICONDUCTOR technology transistor offers reliable performance in demanding environments.
PD55003STR-E by STMicroelectronics

PD55003STR-E

STMicroelectronics

STMicroelectronics PD55003STR-E is a N-CHANNEL RF FET with 40V DS breakdown voltage, suitable for amplifier applications in the UHF band. It has a max drain current of 2.5A and operates in enhancement mode, offering high power dissipation up to 31.7W in a small outline package.