Infineon Technologies - PTFA092201E-220W

  1. Home
  2. Infineon Technologies - PTFA092201E-220W
PTFA092201E-220W by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTFA092201E-220W
Description RF Power Field-Effect Transistors;
Datasheet PTFA092201E-220W Datasheet
In Stock125
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
125 - -

Popular Products

Category Top Products

MMRF1015GNR1 by NXP Semiconductors

MMRF1015GNR1

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
AFT09S282NR3 by NXP Semiconductors

AFT09S282NR3

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN;
PD54008S by STMicroelectronics

PD54008S

STMicroelectronics

STMicroelectronics PD54008S is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max Drain Current of 5A, 73W Power Dissipation, and operates at up to 165 °C temperature.
BLF147 by New Jersey Semiconductor Products

BLF147

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
934064594112 by NXP Semiconductors

934064594112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Package Style (Meter): FLATPACK; Operating Mode: ENHANCEMENT MODE;
PD84008-E by STMicroelectronics

PD84008-E

STMicroelectronics

PD84008-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 79 W.
A5G26S004NT6 by NXP Semiconductors

A5G26S004NT6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
934064687118 by NXP Semiconductors

934064687118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;
MRF151G by Asi Semiconductor

MRF151G

Asi Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): 40 A;
934065321118 by NXP Semiconductors

934065321118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
934065231112 by NXP Semiconductors

934065231112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON;
PD54008L-E by STMicroelectronics

PD54008L-E

STMicroelectronics

STMicroelectronics PD54008L-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 5A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a 26.7W power dissipation and operates in ENHANCEMENT MODE at up to 150°C.
TGF4212XCMX by Texas Instruments

TGF4212XCMX

Texas Instruments

TGF4212XCMX by Texas Instruments is an N-CHANNEL RF Power FET for amplifier applications. Operating in DEPLETION MODE, it offers a Min DS Breakdown Voltage of 10V and works in KU BAND frequency range. This RECTANGULAR chip with GALLIUM ARSENIDE technology has 4 terminals and is surface mountable.
935433396528 by NXP Semiconductors

935433396528

NXP Semiconductors

RF Power Field-Effect Transistors;
PD55003-E by STMicroelectronics

PD55003-E

STMicroelectronics

STMicroelectronics PD55003-E is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND with 40V DS Breakdown Voltage and 2.5A Drain Current. The PLASTIC/EPOXY package features GULL WING terminals, SMALL OUTLINE style, and can handle up to 31.7W power dissipation at 165°C max temperature.
A2T21H360-24SR6 by NXP Semiconductors

A2T21H360-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
AFT26H250-24SR6 by NXP Semiconductors

AFT26H250-24SR6

NXP Semiconductors

NXP Semiconductors' AFT26H250-24SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-power RF applications in various industries.
PD57060STR-E by STMicroelectronics

PD57060STR-E

STMicroelectronics

PD57060STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance in demanding environments.
PD57045 by STMicroelectronics

PD57045

STMicroelectronics

STMicroelectronics PD57045 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in Enhancement Mode for AMPLIFIER applications at Ultra High Frequency Band. With a max ID of 5A and operating temperature of 165 °C, it features GULL WING terminals in a SMALL OUTLINE package.
BLF178XRS,112 by Ampleon Netherlands B V

BLF178XRS,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): FLATPACK; Terminal Position: DUAL;