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Manufacturer | STMicroelectronics |
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Manufacturer's Part Number | STAP1011-180 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 800 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY; |
Datasheet | STAP1011-180 Datasheet |
In Stock | 192 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Sub-Category: | FET General Purpose Power |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 65 V |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | 800 W |
Terminal Position: | DUAL |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PDFM-F4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Highest Frequency Band: | L BAND |
Maximum Operating Temperature: | 165 Cel |
Case Connection: | SOURCE |
Peak Reflow Temperature (C): | NOT SPECIFIED |