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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | A3T18H408W24SR3 |
| Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE; Package Body Material: CERAMIC, METAL-SEALED COFIRED; |
| Datasheet | A3T18H408W24SR3 Datasheet |
| In Stock | 1,719 |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 14.3 dB |
| Other Names: |
2832-A3T18H408W24SR3 935389834128 568-A3T18H408W24SR3TR |
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | COMPLEX |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -40 Cel |
| No. of Terminals: | 6 |
| Minimum DS Breakdown Voltage: | 65 V |
| Terminal Position: | QUAD |
| Package Style (Meter): | FLATPACK |
| JESD-30 Code: | R-CQFP-F6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | L BAND |
| Maximum Operating Temperature: | 225 Cel |
| Peak Reflow Temperature (C): | 260 |









