Infineon Technologies - PTFA212001FV4

  1. Home
  2. Infineon Technologies - PTFA212001FV4
PTFA212001FV4 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTFA212001FV4
Description N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 625 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet PTFA212001FV4 Datasheet
In Stock821
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 625 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
821 - -

Popular Products

Category Top Products

D2002UK by Tt Electronics Plc

D2002UK

Tt Electronics Plc

D2002UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR FET has a max ID of 2A and can withstand temperatures up to 200°C.
MRFE6VP5600HR6 by Freescale Semiconductor

MRFE6VP5600HR6

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1670 W; Minimum DS Breakdown Voltage: 130 V; JESD-30 Code: R-CDFM-F4;
A2G26H281-04SR3 by NXP Semiconductors

A2G26H281-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-CDFP-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
PD85025TR-E by STMicroelectronics

PD85025TR-E

STMicroelectronics

PD85025TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
A2T26H160-24SR3 by Freescale Semiconductor

A2T26H160-24SR3

Freescale Semiconductor

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
MW6S010GNR1 by Freescale Semiconductor

MW6S010GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61.4 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G2;
934064593118 by NXP Semiconductors

934064593118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Highest Frequency Band: S BAND; Maximum Drain Current (ID): 28 A;
934065672112 by NXP Semiconductors

934065672112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Transistor Element Material: SILICON; Highest Frequency Band: L BAND; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;
MRFE6S9060NR1 by Freescale Semiconductor

MRFE6S9060NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;
PD57070 by STMicroelectronics

PD57070

STMicroelectronics

PD57070 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
AFT20P060-4NR3 by Freescale Semiconductor

AFT20P060-4NR3

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: Matte Tin (Sn);
MRF151 by New Jersey Semiconductor Products

MRF151

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 16 A; Maximum Drain-Source On Resistance: .5 ohm;
A2T23H300-24SR6 by Freescale Semiconductor

A2T23H300-24SR6

Freescale Semiconductor

RF Power Field-Effect Transistors;
MRF136Y by Motorola

MRF136Y

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
MW6S010GNR1 by NXP Semiconductors

MW6S010GNR1

NXP Semiconductors

NXP Semiconductors' MW6S010GNR1 is a RF Power FET with 68V DS Breakdown Voltage, suitable for L Band applications. It operates in Enhancement Mode, has 61.4W Max Power Dissipation, and features N-Channel configuration for amplifier circuits.
RF5L0912750CB4 by STMicroelectronics

RF5L0912750CB4

STMicroelectronics

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);
934065321112 by NXP Semiconductors

934065321112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFP-F4; Terminal Position: DUAL; Terminal Form: FLAT;
PTVA101K02EVV1R250 by Infineon Technologies

PTVA101K02EVV1R250

Infineon Technologies

Infineon's PTVA101K02EVV1R250 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 17dB Power Gain, and L BAND frequency. It's a COMMON SOURCE transistor for AMPLIFIER applications in ENHANCEMENT MODE. The package is CERAMIC/METAL-SEALED COFIRED, RECTANGULAR shape, FLANGE MOUNT style with 4 terminals and max temp of 225°C.
MRFE6VP100HSR5 by Freescale Semiconductor

MRFE6VP100HSR5

Freescale Semiconductor

N-CHANNEL; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 150 Cel;
MRF141G by Tyco Electronics M/a-com

MRF141G

Tyco Electronics M/a-com

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Peak Reflow Temperature (C): NOT SPECIFIED;