PTFB182503FLV2R0XTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	PTFB182503FLV2R0XTMA1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V;
Datasheet	PTFB182503FLV2R0XTMA1 Datasheet
In Stock	641

NAME	DESCRIPTION
Minimum Power Gain (Gp):	18 dB
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	65 V
Terminal Position:	QUAD
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-CQFP-X4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	SOURCE
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
641	-	-

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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