MRF8S21200HSR6 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	MRF8S21200HSR6
Description	N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;
In Stock	1,440

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	COMMON SOURCE, 2 ELEMENTS
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	65 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-CDFP-F4
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	S BAND
Maximum Operating Temperature:	225 Cel
Case Connection:	SOURCE
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,440	-	-

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