Infineon Technologies - PTFB241402F-2X70W

  1. Home
  2. Infineon Technologies - PTFB241402F-2X70W
PTFB241402F-2X70W by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTFB241402F-2X70W
Description RF Power Field-Effect Transistors;
Datasheet PTFB241402F-2X70W Datasheet
In Stock648
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
648 - -

Popular Products

Category Top Products

MRF137 by M/a-com Technology Solutions

MRF137

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
A3T09S100NR1 by NXP Semiconductors

A3T09S100NR1

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
934065979118 by NXP Semiconductors

934065979118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; No. of Terminals: 4; Minimum DS Breakdown Voltage: 65 V;
933817030112 by NXP Semiconductors

933817030112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V;
PD57018-E by STMicroelectronics

PD57018-E

STMicroelectronics

STMicroelectronics PD57018-E is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 2.5A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features ENHANCEMENT MODE operation, GULL WING terminals, and a SMALL OUTLINE package style.
MRF171A by Tyco Electronics M/a-com

MRF171A

Tyco Electronics M/a-com

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: ROUND;
MRF1517NT1 by NXP Semiconductors

MRF1517NT1

NXP Semiconductors

NXP Semiconductors' MRF1517NT1 is a single N-channel RF Power FET with 25V DS breakdown voltage and 4A max drain current. Ideal for amplifier applications in the UHF band, it operates in enhancement mode with a max power dissipation of 62.5W.
BLF645,112 by Ampleon Netherlands B V

BLF645,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Shape: RECTANGULAR;
SD56120M by STMicroelectronics

SD56120M

STMicroelectronics

SD56120M by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 14 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in high-power environments with a max dissipation of 236 W.
MRF6V10010NR4 by NXP Semiconductors

MRF6V10010NR4

NXP Semiconductors

NXP's MRF6V10010NR4 is a single N-channel RF FET with 100V DS breakdown voltage, ideal for amplifier applications in L Band. It features a plastic/epoxy package, operates in enhancement mode at up to 200°C, and has a moisture sensitivity level of 3.
MRF176GU by M/a-com Technology Solutions

MRF176GU

M/a-com Technology Solutions

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 400 W; Package Style (Meter): FLANGE MOUNT; Transistor Application: AMPLIFIER;
AFV121KHR5 by Freescale Semiconductor

AFV121KHR5

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; No. of Terminals: 4; Maximum Feedback Capacitance (Crss): 2.5 pF;
A2V07H525-04NR6 by NXP Semiconductors

A2V07H525-04NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
MRFX1K80HR5 by NXP Semiconductors

MRFX1K80HR5

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
MMRF1015GNR1 by NXP Semiconductors

MMRF1015GNR1

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
TIM1314-30L by Toshiba

TIM1314-30L

Toshiba

The Toshiba TIM1314-30L is an N-channel RF Power FET with a ceramic/metal-sealed co-fired package. It operates in depletion mode, suitable for amplifier applications in the Ku band. With a max drain current of 20A and power dissipation of 136W, it offers high performance in a flange mount package.
934065908118 by NXP Semiconductors

934065908118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
FLU35XM by Fujitsu

FLU35XM

Fujitsu

FLU35XM by Fujitsu is a N-CHANNEL RF FET with 15V DS Breakdown Voltage, operating in DEPLETION MODE. Ideal for L BAND applications, it features 15W Power Dissipation, GALLIUM ARSENIDE technology, and can withstand up to 175°C.
PD57045-E by STMicroelectronics

PD57045-E

STMicroelectronics

STMicroelectronics' PD57045-E is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 5A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 165°C.
TIM5964-35SLA-422 by Toshiba

TIM5964-35SLA-422

Toshiba

Toshiba's TIM5964-35SLA-422 is an N-channel RF Power FET with a ceramic-metal-sealed co-fired package. Operating in depletion mode, it has a max drain current of 20A and can handle up to 115.4W power dissipation. Ideal for amplifier applications in the C band due to its high-frequency capabilities and source case connection.