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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | PTFC262157FHV1XWSA1 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-CQFP-X4; |
| Datasheet | PTFC262157FHV1XWSA1 Datasheet |
| In Stock | 838 |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 18 dB |
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 65 V |
| Terminal Position: | QUAD |
| Package Style (Meter): | FLATPACK |
| JESD-30 Code: | R-CQFP-X4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | S BAND |
| Maximum Operating Temperature: | 225 Cel |
| Case Connection: | SOURCE |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
