Infineon Technologies - PTFC270101MV1R1KXUMA1

  1. Home
  2. Infineon Technologies - PTFC270101MV1R1KXUMA1
PTFC270101MV1R1KXUMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTFC270101MV1R1KXUMA1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY; Case Connection: SOURCE;
Datasheet PTFC270101MV1R1KXUMA1 Datasheet
In Stock352
NAME DESCRIPTION
Minimum Power Gain (Gp): 19.5 dB
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
JESD-609 Code: e4
No. of Terminals: 10
Minimum DS Breakdown Voltage: 65 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N10
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
352 - -

Popular Products

Category Top Products

SD2943 by STMicroelectronics

SD2943

STMicroelectronics

SD2943 by STMicroelectronics is an N-CHANNEL RF Power FET with a 130V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 40A and 648W power dissipation. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE operation and SOURCE case connection.
PD84008STR-E by STMicroelectronics

PD84008STR-E

STMicroelectronics

PD84008STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
BLF177 by Ampleon Netherlands B V

BLF177

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Reference Standard: IEC-60134; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .3 ohm;
TGF2023-2-02 by Triquint Semiconductor

TGF2023-2-02

Triquint Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; Package Shape: RECTANGULAR; JESD-30 Code: R-XUUC-N3;
RF2L16080CF2 by STMicroelectronics

RF2L16080CF2

STMicroelectronics

RF Power Field-Effect Transistors;
PD54003STR-E by STMicroelectronics

PD54003STR-E

STMicroelectronics

PD54003STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
CLF1G0035-50 by Ampleon Netherlands B V

CLF1G0035-50

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Case Connection: SOURCE;
TIM1314-30L by Toshiba

TIM1314-30L

Toshiba

The Toshiba TIM1314-30L is an N-channel RF Power FET with a ceramic/metal-sealed co-fired package. It operates in depletion mode, suitable for amplifier applications in the Ku band. With a max drain current of 20A and power dissipation of 136W, it offers high performance in a flange mount package.
CLF1G0035S-100,112 by Ampleon Netherlands B V

CLF1G0035S-100,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM NITRIDE; JESD-30 Code: R-CDFP-F2; Operating Mode: DEPLETION MODE;
PD84006-E by STMicroelectronics

PD84006-E

STMicroelectronics

PD84006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max temp of 165 °C.
PD54003-E by STMicroelectronics

PD54003-E

STMicroelectronics

STMicroelectronics' PD54003-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage. It operates in Enhancement Mode for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. With a max ID of 4A and 52.8W power dissipation, it's ideal for high-power RF amplification needs.
TSD2922 by STMicroelectronics

TSD2922

STMicroelectronics

TSD2922 by STMicroelectronics is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V. Operating in the Ultra High Frequency Band, it has a max temperature of 200 °C. This transistor is commonly used in applications requiring high power and frequency performance, such as telecommunications and radar systems.
PD54003 by STMicroelectronics

PD54003

STMicroelectronics

STMicroelectronics PD54003 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, with 4A Drain Current and 52.8W Power Dissipation. Ideal for amplifier applications, it features a Gull Wing terminal form and small outline package style.
RF2L16180CF2 by STMicroelectronics

RF2L16180CF2

STMicroelectronics

RF Power Field-Effect Transistors;
AFT09MS007NT1 by NXP Semiconductors

AFT09MS007NT1

NXP Semiconductors

AFT09MS007NT1 by NXP Semiconductors is an N-CHANNEL RF Power FET with a max power dissipation of 182W. It operates at up to 150°C, making it suitable for high-temperature applications. With surface mount capability and a single configuration, it's ideal for various RF power amplification needs.
A2T09D400-23NR6 by NXP Semiconductors

A2T09D400-23NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN;
MRFE6VP6300HR5 by Freescale Semiconductor

MRFE6VP6300HR5

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
MRF1513T1 by M/a-com Technology Solutions

MRF1513T1

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON; Package Style (Meter): CHIP CARRIER;
LET20015 by STMicroelectronics

LET20015

STMicroelectronics

LET20015 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V breakdown voltage, operates at up to 2A drain current, and supports L-band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
PTFA080551FV4R250XTMA1 by Wolfspeed

PTFA080551FV4R250XTMA1

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Terminal Form: FLAT; Package Shape: SQUARE;