Infineon Technologies - PTH32002

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Maximum Operating Frequency: 8000 MHz;

Broadcom's MGA-30889-BLKG is a GAAS RF amplifier with 14.6 dB gain, operating from 40 MHz to 2600 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component features surface mounting and matte tin terminals, with a characteristic impedance of 50 ohms.

The Motorola MWA330 is a RF & Microwave Amplifier with max input power of 20 dBm and VSWR of 3. It operates in wide band low power applications from 0.1 MHz to 1000 MHz, making it ideal for various hybrid technology modules. With a metal package body, it can withstand temperatures from -25°C to 80°C.

TCBT-14+ by Mini-circuits is a wide band low power RF amplifier with max input power of 30 dBm and VSWR of 1.5. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in a compact form factor. With gold over nickel finish, it ensures reliable operation in temperatures ranging from -40°C to 85°C.

Qorvo's QPA1019TR7 is a wide band high power RF amplifier with 30 dB gain, operating from 4.5 GHz to 7 GHz. It can handle up to 28 dBm CW input power and has gold terminal finish. Ideal for RF & microwave applications requiring high power amplification in temperatures ranging from -40°C to 85°C.

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; JESD-609 Code: e3;

HMC751LC4TR by Analog Devices is a wide band low power RF amplifier with 22 dB gain. It operates from 17-27 GHz, ideal for microwave applications. Featuring a ceramic package, it has a max input power of -5 dBm and requires 4V supply voltage.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 1.3;

SGA-2463Z by Sirenza Microdevices is a wide band low power RF amplifier with a gain of 17.1 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 3; Package Equivalence Code: LCC8,.2SQ,28;

ADL5544ARKZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 30 MHz to 6 GHz. It has a max input power of 18 dBm and operates on a 5V supply, making it suitable for various RF and microwave applications. The component is constructed using bipolar technology in a plastic/epoxy package for surface mounting.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

Broadcom's MGA-72543-BLKG is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package body, matte tin terminal finish, and operates on a 3V power supply.

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Gain: 0 dB;

WIDE BAND LOW POWER;

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; Maximum Operating Temperature: 125 Cel;

The Mini-circuits ERA-3SM is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 3000 MHz. It has a max input power of 13 dBm and VSWR of 1.5, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is designed for surface mount installation and operates within a temperature range of -45 to 85°C.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Additional Features: LOW NOISE;