Infineon Technologies - PTH32003

  1. Home
  2. Infineon Technologies - PTH32003
PTH32003 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTH32003
Description NARROW BAND HIGH POWER; Minimum Operating Frequency: 1930 MHz; Maximum Voltage Standing Wave Ratio: 1.5; Maximum Operating Frequency: 1990 MHz; Construction: COMPONENT; Gain: 23 dB;
Datasheet PTH32003 Datasheet
In Stock51
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 1.5
Construction: COMPONENT
Minimum Operating Frequency: 1930 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 1990 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 23 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
51 - -

Popular Products

Category Top Products

TQP369184 by Triquint Semiconductor

TQP369184

Triquint Semiconductor

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 24 dBm; Minimum Operating Frequency: 0 MHz; Construction: COMPONENT; Gain: 19 dB;
MGA-72543-BLK by Hewlett Packard

MGA-72543-BLK

Hewlett Packard

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Maximum Input Power (CW): 20 dBm; Construction: COMPONENT; Gain: 9.2 dB; Characteristic Impedance: 50 ohm;
BGU7005,115 by NXP Semiconductors

BGU7005,115

NXP Semiconductors

The NXP Semiconductors BGU7005,115 is a RF & Microwave Amplifier with 14 dB gain and 50 ohm impedance. Operating b/w 1559-1610 MHz, it has a max input power of 0 dBm. Ideal for narrow band low power applications, this component is surface mountable and operates in temperatures ranging from -40 to 85 °C.
RDA1005LSR by Rf Micro Devices

RDA1005LSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 4000 MHz;
AM-147-PIN by Tyco Electronics M/a-com

AM-147-PIN

Tyco Electronics M/a-com

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Frequency: 500 MHz; Gain: 15.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: HIGH RELIABILITY, I/P POWER-MAX (PEAK)=27DBM;
MMG15241HT1 by Freescale Semiconductor

MMG15241HT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Supply Current: 105 mA;
BGA614H6327XTSA1 by Infineon Technologies

BGA614H6327XTSA1

Infineon Technologies

Infineon's BGA614H6327XTSA1 is a wide band low power RF amplifier with 17.5 dB gain and 10 dBm max input power. Operating from -65 to 150 °C, it covers frequencies from 0 to 2400 MHz, making it ideal for RF & microwave applications requiring high performance in a compact form factor.
AC1226 by Teledyne Cougar

AC1226

Teledyne Cougar

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Minimum Operating Temperature: -55 Cel; Maximum Supply Current: 79 mA; Package Equivalence Code: CAN4,.3;
ADL8142ACPZN-CSL by Analog Devices

ADL8142ACPZN-CSL

Analog Devices

WIDE BAND LOW POWER;
MAX2611EUS+T by Analog Devices

MAX2611EUS+T

Analog Devices

MAX2611EUS+T by Analog Devices is a wide band low power RF amplifier with 17.3 dB gain, operating from 0 to 1100 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for surface mount applications in RF & microwave systems.
MMZ09312BT1 by Freescale Semiconductor

MMZ09312BT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
HMC441LP3TR by Hittite Microwave

HMC441LP3TR

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Frequency: 13500 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 10 dB; Maximum Input Power (CW): 15 dBm;
HMC960LP4ETR by Hittite Microwave

HMC960LP4ETR

Hittite Microwave

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Additional Features: LOW NOISE;
MGA-545P8-TR1 by Broadcom

MGA-545P8-TR1

Broadcom

Broadcom's MGA-545P8-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 50 MHz to 7 GHz. It has a max input power of 20 dBm and operates on a 3.3V power supply. This wide band medium power amplifier is ideal for applications requiring surface mount construction in RF & microwave systems.
MSA-1105 by Broadcom

MSA-1105

Broadcom

Broadcom's MSA-1105 is a RF & Microwave Amplifier with 13 dBm CW input power, 1.7 VSWR, and 50 ohm impedance. Ideal for wide band low power applications from 50 MHz to 1300 MHz, it operates b/w -25°C to 85°C with a max supply current of 70 mA.
MGA-81563-BLKG by Agilent Technologies

MGA-81563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
MMG3002NT1 by NXP Semiconductors

MMG3002NT1

NXP Semiconductors

NXP Semiconductors' MMG3002NT1 is a wide band low power RF amplifier with 19.3 dB gain, handling up to 12 dBm CW input power. Operating from 40 MHz to 3600 MHz, it's ideal for RF and microwave applications requiring high performance in a compact form factor.
MAAM28000-A1G by M/a-com

MAAM28000-A1G

M/a-com

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -55 Cel;
HMC8411TCPZ-EP-PT by Analog Devices

HMC8411TCPZ-EP-PT

Analog Devices

Analog Devices' HMC8411TCPZ-EP-PT is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from -55 to 125 °C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
CMD264P3 by Qorvo

CMD264P3

Qorvo

Qorvo's CMD264P3 is a wide band low power RF amplifier with 18 dB gain, operating from 6-18 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high performance in a compact component.