Infineon Technologies - PTMA080302M

  1. Home
  2. Infineon Technologies - PTMA080302M
PTMA080302M by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTMA080302M
Description WIDE BAND HIGH POWER; Terminal Finish: Matte Tin (Sn); Maximum Input Power (CW): 16 dBm; Minimum Operating Frequency: 700 MHz; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 10;
Datasheet PTMA080302M Datasheet
In Stock241
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 10
Construction: COMPONENT
Maximum Input Power (CW): 16 dBm
Minimum Operating Frequency: 700 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 1000 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Gain: 31 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
241 - -

Popular Products

Category Top Products

HMC618LP3ETR by Hittite Microwave

HMC618LP3ETR

Hittite Microwave

NARROW BAND LOW POWER;
HMC462LP5 by Analog Devices

HMC462LP5

Analog Devices

HMC462LP5 by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 2-20 GHz, handles up to 18 dBm input power, and has a max temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact surface mount package.
HMC462LP5E by Hittite Microwave

HMC462LP5E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
HMC326MS8GETR by Analog Devices

HMC326MS8GETR

Analog Devices

Analog Devices' HMC326MS8GETR is a wide band medium power RF amplifier with 18dB gain and 50 ohm impedance. It operates from 3-4.5GHz, handles up to 15dBm input power, and requires a 5V supply. Ideal for RF & microwave applications requiring high performance in a compact surface mount package.
HMC794LP3ETR by Analog Devices

HMC794LP3ETR

Analog Devices

WIDE BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
SGA-3463Z by Sirenza Microdevices

SGA-3463Z

Sirenza Microdevices

SGA-3463Z by Sirenza Microdevices is a wide band low power RF amplifier with 20 dB gain, operating from 0 to 5000 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.
BGA616H6327XTSA1 by Infineon Technologies

BGA616H6327XTSA1

Infineon Technologies

Infineon's BGA616H6327XTSA1 is a wide band low power RF amplifier with 18dB gain and 10dBm CW input power. Operating from -65°C to 150°C, it covers frequencies from 0MHz to 2700MHz. Ideal for applications requiring high performance in RF & microwave amplification.
HMC635LC4 by Hittite Microwave

HMC635LC4

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;
HMC963LC4 by Hittite Microwave

HMC963LC4

Hittite Microwave

WIDE BAND LOW POWER; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier; Minimum Operating Frequency: 6000 MHz; JESD-609 Code: e4; Gain: 16.5 dB; Maximum Input Power (CW): 0 dBm;
CMD170P4 by Qorvo

CMD170P4

Qorvo

WIDE BAND MEDIUM POWER;
MGA-61563-BLKG by Broadcom

MGA-61563-BLKG

Broadcom

Broadcom's MGA-61563-BLKG is a GAAS RF amplifier with 6.9dB gain, operating from 100MHz to 6GHz. It has a max input power of 18dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. With a compact plastic/epoxy package and surface mounting feature, it offers high performance with 48mA supply current at 3/5V.
HMC589AST89E by Analog Devices

HMC589AST89E

Analog Devices

Analog Devices' HMC589AST89E is a wide band low power RF amplifier with 13 dB gain and 8 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 0 to 4000 MHz. Ideal for RF & microwave applications requiring high performance in a compact form factor.
BGU8052X by NXP Semiconductors

BGU8052X

NXP Semiconductors

WIDE BAND LOW POWER;
ADL9006ACGZN-R7 by Analog Devices

ADL9006ACGZN-R7

Analog Devices

RF/Microwave Amplifiers;
HMC441LC3B by Analog Devices

HMC441LC3B

Analog Devices

Analog Devices' HMC441LC3B is a wide band medium power RF amplifier with 10 dB gain, operating from 6-18 GHz. It has a max input power of 15 dBm and operates on a 5V supply, drawing 115 mA. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.
TSS-53LNB+ by Mini-circuits

TSS-53LNB+

Mini-circuits

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Power Supplies (V): 5;
MGA-30789-BLKG by Broadcom

MGA-30789-BLKG

Broadcom

Broadcom's MGA-30789-BLKG is a wide band medium power RF amplifier with 8 dB gain. It operates from 2-6 GHz, handling up to 24 dBm CW input power. This surface mount component is ideal for RF and microwave applications requiring high performance in plastic/epoxy package.
ADL9005ACPZN by Analog Devices

ADL9005ACPZN

Analog Devices

ADL9005ACPZN by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 10 MHz to 26500 MHz. It has a max input power of 22 dBm and VSWR of 1.49, suitable for RF & microwave applications requiring high performance amplification in plastic/epoxy package.
HMC499 by Hittite Microwave

HMC499

Hittite Microwave

WIDE BAND MEDIUM POWER; Maximum Input Power (CW): 20 dBm; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Gain: 12 dB; Minimum Operating Frequency: 21000 MHz;
MAAL-011129-TR1000 by M/a-com Technology Solutions

MAAL-011129-TR1000

M/a-com Technology Solutions

MAAL-011129-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 20 dB gain. It operates b/w 18-31.5 GHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40 to 85°C.