Infineon Technologies - PTMA210452EL-45W

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Construction: COMPONENT;

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 100 MHz; Maximum Operating Frequency: 4000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 27 dBm; Gain: 6.4 dB;

TQP3M9008 by Qorvo is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. Ideal for RF applications requiring high performance in plastic/epoxy package.

WIDE BAND LOW POWER; Additional Features: LOW NOISE; Construction: COMPONENT; Maximum Operating Frequency: 6000 MHz; Characteristic Impedance: 50 ohm; Gain: 9.2 dB;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TO-243;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12 dB;

MAAL-011141-000PPR by M/a-com Technology Solutions is a wide band low power RF amplifier with a gain of 17.5 dB. It has a max input power of 10 dBm and operates in temperatures ranging from -40 to 85 °C. This amplifier is suitable for applications requiring amplification in the RF and microwave frequency range up to 28 GHz.

Qorvo's QPA1010 is a GAN technology RF amplifier with 21.1 dB gain, operating from 7900-11000 MHz. It offers 30 dBm CW input power, VSWR of 3, and -1.8 to 24V power supplies. Ideal for wideband high-power applications with a surface-mount package body material made of plastic/epoxy.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

XP1039-QJ-0G00 by M/a-com Technology Solutions is a wide band high power RF & microwave amplifier with a gain of 15.5 dB. It operates in the frequency range of 5600 MHz to 7100 MHz and can handle a max input power of 25 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Additional Features: LOW NOISE;

WIDE BAND LOW POWER; No. of Terminals: 4; Package Body Material: METAL; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 13 dBm;

Analog Devices' HMC441LP3ETR is a GAAS RF amplifier with 10dB gain, operating from 6.5 to 13.5GHz, handling up to 15dBm CW input power. With a compact surface-mount package and low power consumption of 115mA at 5V, it's ideal for wideband applications in RF and microwave systems.

Analog Devices' HMC6981LS6TR is a GaAs RF amplifier with 16 terminals, operating at 6V. With wideband high power capability, it has a ceramic package and can withstand temperatures from -40°C to 85°C. Ideal for surface mount applications in RF and microwave systems.

MAX2244EBL-T by Maxim Integrated is a RF amplifier with 10 dBm CW input power, 6 VSWR, and 3V supply. It operates b/w -40 to 85°C, ideal for narrow band low power applications in the frequency range of 2400-2500 MHz. The component has a surface mount package with 9 terminals and requires a max current of 205 mA.

Qorvo's SPF-5189Z is a GAAS RF amplifier with 11.3 dB gain, operating from 50 MHz to 4 GHz. It has a max input power of 27 dBm and operates on a 5V supply. Ideal for wideband medium-power applications, it features surface mounting and a plastic/epoxy package body.

Sirenza Microdevices' SBB-5089Z is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 12 dBm and operates on a 5V supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can withstand temperatures ranging from -40°C to 85°C.

Analog Devices' HMC8410LP2FETR is a wide band low power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 10 MHz to 10 GHz, handling up to 20 dBm CW input power. Ideal for RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

Sumitomo Electric Industries' EMM5077VU is a wide band medium power RF amplifier with 21 dB gain and 26 dBm CW input power. Operating from -40 to 85 °C, it covers frequencies from 3400 to 5000 MHz. Ideal for RF applications requiring high performance in a compact form factor.