Infineon Technologies - PTRA083818NFV1R5XUMA1

  1. Home
  2. Infineon Technologies - PTRA083818NFV1R5XUMA1
PTRA083818NFV1R5XUMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTRA083818NFV1R5XUMA1
Description RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3;
Datasheet PTRA083818NFV1R5XUMA1 Datasheet
In Stock447
NAME DESCRIPTION
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
447 - -

Popular Products

Category Top Products

DE475-501N44A by IXYS Corporation

DE475-501N44A

IXYS Corporation

DE475-501N44A by IXYS is a N-channel RF Power FET with 500V DS breakdown voltage, suitable for switching applications in the VHF band. It features a max drain current of 48A, operates in enhancement mode, and has a package style of small outline.
AFM912NT1 by NXP Semiconductors

AFM912NT1

NXP Semiconductors

RF Power Field-Effect Transistors;
AFT05MS031NR1 by Freescale Semiconductor

AFT05MS031NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 294 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BLF6G13LS-250P by NXP Semiconductors

BLF6G13LS-250P

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 100 V;
RF2L42008CG2 by STMicroelectronics

RF2L42008CG2

STMicroelectronics

RF Power Field-Effect Transistors;
LET9130 by STMicroelectronics

LET9130

STMicroelectronics

LET9130 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 15 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in high-power scenarios with a dissipation capacity of 217 W.
934056375135 by NXP Semiconductors

934056375135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER;
934061137118 by NXP Semiconductors

934061137118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Minimum DS Breakdown Voltage: 65 V;
934061296112 by NXP Semiconductors

934061296112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
934064592112 by NXP Semiconductors

934064592112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; No. of Elements: 1;
ST36015 by STMicroelectronics

ST36015

STMicroelectronics

RF Power Field-Effect Transistors;
BLF147 by Ampleon Netherlands B V

BLF147

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V; Terminal Form: FLAT;
MRF9180 by Motorola

MRF9180

Motorola

MRF9180 by Motorola is an N-CHANNEL RF Power FET with 2 elements, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a CERAMIC, METAL-SEALED COFIRED package and operates in ENHANCEMENT MODE up to 200 °C, with a max power dissipation of 388 W.
934061275112 by NXP Semiconductors

934061275112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Elements: 2; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
934061559112 by NXP Semiconductors

934061559112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 18 A; Terminal Position: DUAL; No. of Elements: 1;
934056583112 by NXP Semiconductors

934056583112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Transistor Application: AMPLIFIER; Terminal Position: DUAL;
934064993112 by NXP Semiconductors

934064993112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Highest Frequency Band: S BAND; Terminal Form: FLAT;
PD85004 by STMicroelectronics

PD85004

STMicroelectronics

STMicroelectronics PD85004 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2A Drain Current. It operates in the Ultra High Frequency Band, suitable for amplifier applications. The transistor features a plastic/epoxy package, flat terminals, and can handle up to 6W power dissipation at 150°C.
PD84010-E by STMicroelectronics

PD84010-E

STMicroelectronics

PD84010-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 95 W.
MRF101AN by NXP Semiconductors

MRF101AN

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;