Infineon Technologies - PTVA030121EAV1

  1. Home
  2. Infineon Technologies - PTVA030121EAV1
PTVA030121EAV1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTVA030121EAV1
Description RF Power Field-Effect Transistors;
Datasheet PTVA030121EAV1 Datasheet
In Stock160
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
160 - -

Popular Products

Category Top Products

934061844112 by NXP Semiconductors

934061844112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDSO-F2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PD55025TR-E by STMicroelectronics

PD55025TR-E

STMicroelectronics

STMicroelectronics PD55025TR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. With 7A ID and 165°C Max Temp, it's a SINGLE configuration transistor suitable for surface mount in small outline packages.
PD57070STR-E by STMicroelectronics

PD57070STR-E

STMicroelectronics

PD57070STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max power dissipation of 95 W.
AFT09MS015NT1 by NXP Semiconductors

AFT09MS015NT1

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
GS61008T-TR by Gan Systems

GS61008T-TR

Gan Systems

GS61008T-TR by Gan Systems is a N-channel RF FET with 100V DS breakdown voltage, ideal for switching applications. Operating in enhancement mode, it offers 90A ID and operates at -55°C. Utilizing GaN technology, it features a plastic/epoxy package and is surface mountable for very high frequency band applications.
AFT09MS007NT1 by Freescale Semiconductor

AFT09MS007NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 182 W; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel;
MRFE6VP5150NR1 by Freescale Semiconductor

MRFE6VP5150NR1

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 133 V; Moisture Sensitivity Level (MSL): 3; JESD-30 Code: R-PDFM-F4;
934064591112 by NXP Semiconductors

934064591112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Drain Current (ID): 28 A;
MRF1K50HR5 by NXP Semiconductors

MRF1K50HR5

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
SD2943 by STMicroelectronics

SD2943

STMicroelectronics

SD2943 by STMicroelectronics is an N-CHANNEL RF Power FET with a 130V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 40A and 648W power dissipation. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE operation and SOURCE case connection.
934065321118 by NXP Semiconductors

934065321118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
A2T21H360-23NR6 by NXP Semiconductors

A2T21H360-23NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
MRF300BN by NXP Semiconductors

MRF300BN

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
SD2942W by STMicroelectronics

SD2942W

STMicroelectronics

SD2942W by STMicroelectronics is a N-CHANNEL RF Power FET with 40A ID and 500W power dissipation. It operates at max temp of 200°C, suitable for high-power RF applications in various industries.
MRFE6VS25GNR1 by Freescale Semiconductor

MRFE6VS25GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
A5G35S004NT6 by NXP Semiconductors

A5G35S004NT6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
MRF136Y by Motorola

MRF136Y

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
MRFE6S9060NR1 by NXP Semiconductors

MRFE6S9060NR1

NXP Semiconductors

NXP Semiconductors' MRFE6S9060NR1 is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with a 66V DS breakdown voltage and can handle ultra-high frequency bands. The transistor, made of silicon MOSFET technology, has a max operating temperature of 225°C and features a flange mount package style.
AFT27S010NT1 by NXP Semiconductors

AFT27S010NT1

NXP Semiconductors

NXP Semiconductors' AFT27S010NT1 is an N-CHANNEL RF Power FET with SINGLE configuration. It operates at a max temperature of 150°C and can withstand peak reflow temperature of 260°C. Ideal for surface mount applications in various electronic devices.
NPT1012B by M/a-com Technology Solutions

NPT1012B

M/a-com Technology Solutions

NPT1012B by M/a-com is an RF Power FET with a 100V DS breakdown voltage, operating in depletion mode for amplifier applications. It features N-channel configuration, GaN element material, and operates in S band frequency range. The transistor is designed for surface mount with a ceramic-metal sealed co-fired package body ideal for high electron mobility technology.