Asi Semiconductor - BLF246

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BLF246 by Asi Semiconductor

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Manufacturer Asi Semiconductor
Manufacturer's Part Number BLF246
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Transistor Element Material: SILICON; Qualification: Not Qualified;
Datasheet BLF246 Datasheet
In Stock862
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 13 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 4
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 130 W
Terminal Position: RADIAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-CRFM-F4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
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