Infineon Technologies - PTVA084007NFV1R5XUMA1

  1. Home
  2. Infineon Technologies - PTVA084007NFV1R5XUMA1
PTVA084007NFV1R5XUMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTVA084007NFV1R5XUMA1
Description RF Power Field-Effect Transistors; Terminal Finish: TIN; JESD-609 Code: e3;
Datasheet PTVA084007NFV1R5XUMA1 Datasheet
In Stock445
NAME DESCRIPTION
Terminal Finish: TIN
JESD-609 Code: e3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
445 - -

Popular Products

Category Top Products

934064591112 by NXP Semiconductors

934064591112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Drain Current (ID): 28 A;
STAC2932B by STMicroelectronics

STAC2932B

STMicroelectronics

STAC2932B by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, breakdown voltage of 125 V, and can dissipate up to 625 W. Ideal for high-performance RF amplification in compact designs.
CLF1G0035-50 by Ampleon Netherlands B V

CLF1G0035-50

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Case Connection: SOURCE;
PD57030TR-E by STMicroelectronics

PD57030TR-E

STMicroelectronics

PD57030TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
934065971112 by NXP Semiconductors

934065971112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Minimum DS Breakdown Voltage: 60 V; Highest Frequency Band: S BAND;
934065321118 by NXP Semiconductors

934065321118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
934056522112 by NXP Semiconductors

934056522112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): 12 A; Package Shape: RECTANGULAR;
VRF151G by Microsemi

VRF151G

Microsemi

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Terminal Finish: TIN SILVER COPPER; No. of Terminals: 4;
MRF1513T1 by NXP Semiconductors

MRF1513T1

NXP Semiconductors

NXP Semiconductors' MRF1513T1 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a max Drain Current of 2A, 31.2W Power Dissipation, and operates at up to 150°C temperature.
GS61008T-TR by Gan Systems

GS61008T-TR

Gan Systems

GS61008T-TR by Gan Systems is a N-channel RF FET with 100V DS breakdown voltage, ideal for switching applications. Operating in enhancement mode, it offers 90A ID and operates at -55°C. Utilizing GaN technology, it features a plastic/epoxy package and is surface mountable for very high frequency band applications.
BLF246 by NXP Semiconductors

BLF246

NXP Semiconductors

The NXP Semiconductors BLF246 is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage and 16dB Power Gain, ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. Featuring a max Drain Current of 13A and a power dissipation of 130W, this METAL-OXIDE SEMICONDUCTOR device operates in ENHANCEMENT MODE at up to 200°C.
MRF176GU by Tyco Electronics M/a-com

MRF176GU

Tyco Electronics M/a-com

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
MRFE6VP6300HR5 by NXP Semiconductors

MRFE6VP6300HR5

NXP Semiconductors

The NXP Semiconductors MRFE6VP6300HR5 is an RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 130V. It operates in the ultra high frequency band and is commonly used as an amplifier. This surface mount transistor has a max operating temperature of 225°C.
PD55035STR-E by STMicroelectronics

PD55035STR-E

STMicroelectronics

STMicroelectronics PD55035STR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 7A Drain Current and 95W Power Dissipation. Ideal for high-power RF amplification needs.
934065231118 by NXP Semiconductors

934065231118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; No. of Elements: 1; Maximum Drain Current (ID): 36 A;
A5G35S008N-3400 by NXP Semiconductors

A5G35S008N-3400

NXP Semiconductors

RF Power Field-Effect Transistors;
AFT26H250-24SR6 by NXP Semiconductors

AFT26H250-24SR6

NXP Semiconductors

NXP Semiconductors' AFT26H250-24SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-power RF applications in various industries.
A2T18S262W12NR3 by NXP Semiconductors

A2T18S262W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
PD57045S by STMicroelectronics

PD57045S

STMicroelectronics

STMicroelectronics PD57045S is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max Drain Current of 5A, operates in ENHANCEMENT MODE, and can withstand temperatures up to 165 °C.
A2T23H200W23SR6 by NXP Semiconductors

A2T23H200W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;