Infineon Technologies - PTVA092407NF

  1. Home
  2. Infineon Technologies - PTVA092407NF
PTVA092407NF by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTVA092407NF
Description RF Power Field-Effect Transistors;
Datasheet PTVA092407NF Datasheet
In Stock711
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
711 - -

Popular Products

Category Top Products

AFG24S100H by NXP Semiconductors

AFG24S100H

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;
PD55008L by STMicroelectronics

PD55008L

STMicroelectronics

PD55008L by STMicroelectronics is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 5A max Drain Current and 45W Power Dissipation. Package style is CHIP CARRIER, ideal for SOURCE connection in various electronic devices.
CGHV27030S by Wolfspeed

CGHV27030S

Wolfspeed

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
AFT09MS015NT1 by Freescale Semiconductor

AFT09MS015NT1

Freescale Semiconductor

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
934065606112 by NXP Semiconductors

934065606112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; No. of Elements: 1; Terminal Form: FLAT;
A3T21H456W23SR6 by NXP Semiconductors

A3T21H456W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
BLF6G21-10G,135 by Ampleon Netherlands B V

BLF6G21-10G,135

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE; Terminal Form: GULL WING;
934061526112 by NXP Semiconductors

934061526112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Form: FLAT; Minimum DS Breakdown Voltage: 60 V;
BLF178XR,112 by Ampleon Netherlands B V

BLF178XR,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Minimum DS Breakdown Voltage: 110 V; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
934061788112 by NXP Semiconductors

934061788112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Form: FLAT; JESD-30 Code: R-CDFM-F4;
D1008UK by Tt Electronics Plc

D1008UK

Tt Electronics Plc

D1008UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR FET has a max temp of 200°C and comes in a RECTANGULAR package with FLANGE MOUNT style.
PD60004S by STMicroelectronics

PD60004S

STMicroelectronics

PD60004S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, operates in enhancement mode, and supports L band frequencies. Its compact SO package ensures efficient surface mounting.
CGH40180PP by Wolfspeed

CGH40180PP

Wolfspeed

CGH40180PP by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the S BAND frequency range and features Gallium Nitride technology. Ideal for amplifier applications, this transistor has a ceramic-metal-sealed co-fired package and is surface mountable.
934055916112 by NXP Semiconductors

934055916112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED;
934064592112 by NXP Semiconductors

934064592112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; No. of Elements: 1;
PD55003-01 by STMicroelectronics

PD55003-01

STMicroelectronics

PD55003-01 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 40V min breakdown voltage, operates at ultra-high frequencies, and supports a max drain current of 2.5A. Ideal for compact surface mount designs, it excels in high-temperature environments up to 150 °C.
SD2918 by STMicroelectronics

SD2918

STMicroelectronics

SD2918 by STMicroelectronics is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 6A Drain Current. It operates in the Ultra High Frequency Band, suitable for high-power applications. With a max power dissipation of 175W and operating temperature up to 200 °C, it is ideal for demanding RF power amplification needs.
MRF6VP121KHR5 by Freescale Semiconductor

MRF6VP121KHR5

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 110 V;
PD54003TR-E by STMicroelectronics

PD54003TR-E

STMicroelectronics

PD54003TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance up to 165 °C.
A2G35S200-01SR3 by NXP Semiconductors

A2G35S200-01SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;