STMicroelectronics - STAC2953

  1. Home
  2. STMicroelectronics - STAC2953
STAC2953 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STAC2953
Description RF Power Field-Effect Transistors;
Datasheet STAC2953 Datasheet
In Stock664
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
664 - -

Popular Products

Category Top Products

BLF278 by NXP Semiconductors

BLF278

NXP Semiconductors

The NXP Semiconductors BLF278 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage, 20dB Power Gain, and 500W Power Dissipation. Commonly used in amplifier applications for the VHF band due to its high power handling capabilities and dual-terminal configuration.
MRF8S21200HSR6 by Freescale Semiconductor

MRF8S21200HSR6

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
ART700FHU by Ampleon Netherlands B V

ART700FHU

Ampleon Netherlands B V

ART700FHU by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with 177V DS Breakdown Voltage, 26.8 dB Power Gain, and operates in the Ultra High Frequency Band. It is a COMMON SOURCE amplifier transistor with METAL-OXIDE SEMICONDUCTOR technology, suitable for high-performance applications requiring a FLANGE MOUNT package style.
STAC0912-250 by STMicroelectronics

STAC0912-250

STMicroelectronics

STAC0912-250 by STMicroelectronics is an N-channel RF Power FET with 80V DS breakdown voltage. It operates in enhancement mode for L Band applications, featuring a plastic/epoxy package and flat terminals. Ideal for amplifier circuits, this single configuration transistor is surface mountable with a source case connection.
A2T09VD250NR1 by NXP Semiconductors

A2T09VD250NR1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
ST50V10100 by STMicroelectronics

ST50V10100

STMicroelectronics

RF Power Field-Effect Transistors;
ARF463AP1G by Microsemi

ARF463AP1G

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Case Connection: SOURCE; Qualification: Not Qualified;
LET9060F by STMicroelectronics

LET9060F

STMicroelectronics

LET9060F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 12 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 130 W.
FLL57MK by Fujitsu Semiconductor America

FLL57MK

Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 15 V; No. of Elements: 1; Operating Mode: DEPLETION MODE;
A5G35H110NT4 by NXP Semiconductors

A5G35H110NT4

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
BLF278,112 by NXP Semiconductors

BLF278,112

NXP Semiconductors

The NXP Semiconductors BLF278,112 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 20dB Power Gain. Commonly used in amplifiers for Very High Frequency applications, it features a max power dissipation of 500W and operates at up to 200°C.
BLF861A by Asi Semiconductor

BLF861A

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDFM-F4;
A5G35S004N-3400 by NXP Semiconductors

A5G35S004N-3400

NXP Semiconductors

RF Power Field-Effect Transistors;
A3G35H100-04SR3 by NXP Semiconductors

A3G35H100-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL; Maximum Operating Temperature: 225 Cel;
934056639112 by NXP Semiconductors

934056639112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT;
MRF6VP11KHR5 by NXP Semiconductors

MRF6VP11KHR5

NXP Semiconductors

N-CHANNEL; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
A3G23H500W17SR3 by NXP Semiconductors

A3G23H500W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CQFP-F6; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;
A3T18H400W23SR6 by NXP Semiconductors

A3T18H400W23SR6

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Style (Meter): FLATPACK; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;
SD2933 by STMicroelectronics

SD2933

STMicroelectronics

SD2933 by STMicroelectronics is a N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 40A Drain Current. It operates in ULTRA HIGH FREQUENCY BAND, suitable for high-power applications like amplifiers and transmitters. The transistor features METAL-OXIDE SEMICONDUCTOR technology and can handle up to 648W power dissipation at 200 °C.
CLF1G0035S-100 by Ampleon Netherlands B V

CLF1G0035S-100

Ampleon Netherlands B V

RF Power Field-Effect Transistors;