Infineon Technologies - PTVA101K02EV-1000W

  1. Home
  2. Infineon Technologies - PTVA101K02EV-1000W
PTVA101K02EV-1000W by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PTVA101K02EV-1000W
Description RF Power Field-Effect Transistors;
Datasheet PTVA101K02EV-1000W Datasheet
In Stock949
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
949 - -

Popular Products

Category Top Products

STAC2932F by STMicroelectronics

STAC2932F

STMicroelectronics

STAC2932F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 40 A, breakdown voltage of 125 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 625 W.
CGH40006P by Wolfspeed

CGH40006P

Wolfspeed

CGH40006P by Wolfspeed is an N-CHANNEL RF Power FET with a CERAMIC, METAL-SEALED COFIRED package. It operates in ENHANCEMENT MODE for AMPLIFIER applications in the C BAND frequency range. Featuring GALLIUM NITRIDE technology, it has a 120V DS Breakdown Voltage and can handle up to 0.75A Drain Current.
934056498112 by NXP Semiconductors

934056498112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (ID): 18 A; Qualification: Not Qualified;
PD55035-E by STMicroelectronics

PD55035-E

STMicroelectronics

PD55035-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max power dissipation of 95 W.
BLF647P,112 by Ampleon Netherlands B V

BLF647P,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 4; Transistor Application: AMPLIFIER;
MRFE6VP100HR5 by Freescale Semiconductor

MRFE6VP100HR5

Freescale Semiconductor

N-CHANNEL; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
MMRF1015GNR1 by NXP Semiconductors

MMRF1015GNR1

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
BLF888D by NXP Semiconductors

BLF888D

NXP Semiconductors

RF Power Field-Effect Transistors;
VRF151G by Microchip Technology

VRF151G

Microchip Technology

VRF151G by Microchip Technology is a N-CHANNEL RF Power FET with 170V DS Breakdown Voltage, 40A Max Drain Current, and 500W Max Power Dissipation. Commonly used in amplifier applications for Very High Frequency Band operations due to its ceramic-metal sealed co-fired package and dual terminal position.
MRF184 by Freescale Semiconductor

MRF184

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Form: FLAT; Qualification: Not Qualified;
934055708135 by NXP Semiconductors

934055708135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 2.2 A;
PD55035STR-E by STMicroelectronics

PD55035STR-E

STMicroelectronics

STMicroelectronics PD55035STR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 7A Drain Current and 95W Power Dissipation. Ideal for high-power RF amplification needs.
RF2L36040CF2 by STMicroelectronics

RF2L36040CF2

STMicroelectronics

RF Power Field-Effect Transistors;
AFT09H310-03SR6 by NXP Semiconductors

AFT09H310-03SR6

NXP Semiconductors

NXP Semiconductors' AFT09H310-03SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-frequency applications in various industries.
CLF1G0035-100 by NXP Semiconductors

CLF1G0035-100

NXP Semiconductors

RF Power Field-Effect Transistors;
MRF141G by Asi Semiconductor

MRF141G

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Transistor Application: AMPLIFIER; Transistor Element Material: SILICON;
PD55008STR-E by STMicroelectronics

PD55008STR-E

STMicroelectronics

PD55008STR-E by STMicroelectronics is an N-CHANNEL RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 40V. It is used as an amplifier in the ultra high frequency band, with a max drain current of 4A and a max power dissipation of 52.8W.
BLF861 by NXP Semiconductors

BLF861

NXP Semiconductors

BLF861 by NXP is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features COMMON SOURCE configuration, 18A ID, and METAL-OXIDE SEMICONDUCTOR technology in a CERAMIC package with FLANGE MOUNT style.
934065317118 by NXP Semiconductors

934065317118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFM-F8; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 65 V;
CLF1G0035S-100 by Ampleon Netherlands B V

CLF1G0035S-100

Ampleon Netherlands B V

RF Power Field-Effect Transistors;