Infineon Technologies - PXAC210552MDV1R5XUMA1

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PXAC210552MDV1R5XUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number PXAC210552MDV1R5XUMA1
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Highest Frequency Band: S BAND; Maximum Operating Temperature: 225 Cel;
Datasheet PXAC210552MDV1R5XUMA1 Datasheet
In Stock186
NAME DESCRIPTION
Minimum Power Gain (Gp): 15 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 65 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-CDSO-G4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Moisture Sensitivity Level (MSL): 3
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