PXAD214218FVV1R0XTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	PXAD214218FVV1R0XTMA1
Description	N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	PXAD214218FVV1R0XTMA1 Datasheet
In Stock	66

NAME	DESCRIPTION
Minimum Power Gain (Gp):	15 dB
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON SOURCE, 2 ELEMENTS
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	6
Minimum DS Breakdown Voltage:	65 V
Terminal Position:	QUAD
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-CQFP-X6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	S BAND
Maximum Operating Temperature:	225 Cel
Case Connection:	SOURCE
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
66	-	-

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