Infineon Technologies - PXFC191507FCV1R250

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PXFC191507FCV1R250 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number PXFC191507FCV1R250
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
Datasheet PXFC191507FCV1R250 Datasheet
In Stock444
NAME DESCRIPTION
Minimum Power Gain (Gp): 19 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 65 V
Terminal Position: QUAD
Package Style (Meter): FLATPACK
JESD-30 Code: R-CQFP-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 225 Cel
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