Infineon Technologies - PZTA14E6327HTSA1

  1. Home
  2. Infineon Technologies - PZTA14E6327HTSA1
PZTA14E6327HTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number PZTA14E6327HTSA1
Description NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .3 A; Case Connection: COLLECTOR;
Datasheet PZTA14E6327HTSA1 Datasheet
In Stock659
NAME DESCRIPTION
Nominal Transition Frequency (fT): 125 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .3 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: DARLINGTON
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 20000
No. of Terminals: 4
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
659 - -

Popular Products

Category Top Products

BC847C by Changzhou Galaxy Century Microelectronics

BC847C

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MMBT2222A by Changzhou Galaxy Century Microelectronics

MMBT2222A

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Peak Reflow Temperature (C): NOT SPECIFIED;
2N2219A by Semicoa

2N2219A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC547B by Taitron Components

BC547B

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V;
2N2905A by Baneasa S A

2N2905A

Baneasa S A

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Terminal Form: WIRE; Qualification: Not Qualified; Transistor Element Material: SILICON;
MMBT2222A-7-F by Diodes Incorporated

MMBT2222A-7-F

Diodes Incorporated

Diodes Inc. MMBT2222A-7-F is a NPN BJT transistor with max. collector-emitter voltage of 40V, max. collector current of 0.6A, and min. DC current gain of 40. Ideal for switching applications due to its small outline package style and fast turn-on/off times (35ns/285ns).
BC817.25 by Central Semiconductor

BC817.25

Central Semiconductor

BC817.25 by Central Semiconductor is a NPN BJT with 160 min hFE and 45V VCEO, ideal for small signal applications. With a max power dissipation of 0.3W and fT of 200MHz, it's suitable for high-frequency circuits in compact designs. This Gull Wing package transistor operates up to 150°C, making it versatile for various electronic devices.
2N3904 by Nec Electronics America

2N3904

Nec Electronics America

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): CYLINDRICAL;
JANTX2N2222AUA by Semicoa

JANTX2N2222AUA

Semicoa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847BPN,115 by NXP Semiconductors

BC847BPN,115

NXP Semiconductors

BC847BPN,115 by NXP Semiconductors is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, hFE of 200, and max power dissipation of 0.4W. Ideal for switching applications with max operating temp of 150°C and VCE of 45V.
SMMBT3904LT1G by Onsemi

SMMBT3904LT1G

Onsemi

SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
MMBT2222ALT1 by Shenzhen Luguang Electronic Technology

MMBT2222ALT1

Shenzhen Luguang Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
2N2907A by General Transistor

2N2907A

General Transistor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
ULN2803AFWG(5,EL,M) by Toshiba

ULN2803AFWG(5,EL,M)

Toshiba

Toshiba's ULN2803AFWG(5,EL,M) is an NPN BJT with 8 Darlington banks. It has a hFE of 1000, VCE of 50V, and IC of 0.5A. Ideal for switching applications, this surface-mount transistor features built-in diodes and resistors in a small outline package.
2N2222A by Silicon Transistor

2N2222A

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2222A by Motorola

2N2222A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;
BC817,215 by Nexperia

BC817,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Maximum Time At Peak Reflow Temperature (s): 30;
BC847B by Changzhou Galaxy Century Microelectronics

BC847B

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;
BC847B by ROHM

BC847B

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2222AUA by Vpt Components

2N2222AUA

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON;