Q67040-S4420 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	Q67040-S4420
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	Q67040-S4420 Datasheet
In Stock	526

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	1.8 A
Maximum Pulsed Drain Current (IDM):	5.4 A
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	25 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	100 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	3 ohm
Avalanche Energy Rating (EAS):	50 mJ
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	600 V
Additional Features:	AVALANCHE RATED
Maximum Drain Current (Abs) (ID):	1.8 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
526	-	-

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