Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | Q67050-A4222-A101 |
| Description | N-Channel; Nominal Turn Off Time (toff): 100 ns; Nominal Turn On Time (ton): 23.5 ns; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Threshold Voltage: 5 V; Maximum Gate-Emitter Voltage: 20 V; |
| Datasheet | Q67050-A4222-A101 Datasheet |
| In Stock | 501 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Turn Off Time (toff): | 100 ns |
| Maximum Collector-Emitter Voltage: | 600 V |
| Nominal Turn On Time (ton): | 23.5 ns |
| Transistor Element Material: | SILICON |
| Maximum Gate-Emitter Threshold Voltage: | 5 V |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Polarity or Channel Type: | N-Channel |
| Maximum VCEsat: | 3.15 V |
| Minimum Operating Temperature: | -55 Cel |









