S29GL128P11DEI014 by Infineon Technologies | Memory ICs

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	S29GL128P11DEI014
Description	FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 62; Package Code: DIE; Package Shape: RECTANGULAR; No. of Functions: 1;
Datasheet	S29GL128P11DEI014 Datasheet
In Stock	190

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Organization:	128MX1
Programming Voltage (V):	3
Minimum Supply Voltage (Vsup):	2.7 V
Surface Mount:	YES
No. of Terminals:	62
No. of Words:	134217728 words
Terminal Position:	UPPER
Package Style (Meter):	UNCASED CHIP
Technology:	CMOS
JESD-30 Code:	R-XUUC-N62
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	DIE
Memory Density:	134217728 bit
Memory IC Type:	FLASH
Minimum Operating Temperature:	-40 Cel
Memory Width:	1
No. of Functions:	1
Type:	NOR TYPE
Qualification:	Not Qualified
Maximum Access Time:	110 ns
No. of Words Code:	128M
Nominal Supply Voltage / Vsup (V):	3
Parallel or Serial:	PARALLEL
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	3.6 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
190	-	-

BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Shape or Style: ROUND; Housing: PLASTIC; Output Interface Type: 1-WIRE INTERFACE;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.