Infineon Technologies - S70KL1282GABHM033

  1. Home
  2. Infineon Technologies - S70KL1282GABHM033
S70KL1282GABHM033 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number S70KL1282GABHM033
Description HYPERRAM;
Datasheet S70KL1282GABHM033 Datasheet
In Stock11
NAME DESCRIPTION
Memory IC Type: HYPERRAM
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
11 - -

Popular Products

Category Top Products

MT53D512M32D2DS-053AIT:D by Micron Technology

MT53D512M32D2DS-053AIT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-053AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 1.8V. It features a max clock frequency of 1869.1 MHz and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics and industrial devices.
MT40A256M16GE-075E:B by Micron Technology

MT40A256M16GE-075E:B

Micron Technology

Micron Technology's MT40A256M16GE-075E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for applications requiring high-speed data processing in commercial-grade environments.
IS43TR16256BL-107MBLI-TR by Integrated Silicon Solution

IS43TR16256BL-107MBLI-TR

Integrated Silicon Solution

IS43TR16256BL-107MBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
MT47H64M16NF-25EIT:MTR by Micron Technology

MT47H64M16NF-25EIT:MTR

Micron Technology

Micron Technology's MT47H64M16NF-25EIT:MTR is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast access times in a compact form factor.
IS42S32400F-6BL by Integrated Silicon Solution

IS42S32400F-6BL

Integrated Silicon Solution

IS42S32400F-6BL by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, 166 MHz clock frequency, and 70°C operating temp. Ideal for applications requiring high-speed memory access in commercial-grade devices.
IS42S16400J-5TL by Integrated Silicon Solution

IS42S16400J-5TL

Integrated Silicon Solution

IS42S16400J-5TL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, operating at up to 200MHz clock frequency. It features self-refresh and common I/O for various applications requiring fast memory access and high data density in a small outline package.
MT48LC4M16A2B4-6AIT:J by Micron Technology

MT48LC4M16A2B4-6AIT:J

Micron Technology

Micron Technology's MT48LC4M16A2B4-6AIT:J is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 167MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.
EDB4432BBBJ-1DAIT-F-R by Micron Technology

EDB4432BBBJ-1DAIT-F-R

Micron Technology

Micron Technology's EDB4432BBBJ-1DAIT-F-R is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for industrial applications requiring high memory density and low power consumption.
NT5CC256M16ER-EK by Nanya Technology

NT5CC256M16ER-EK

Nanya Technology

NT5CC256M16ER-EK by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and low power consumption in compact electronic devices.
EDB4432BBBJ-1DAUT-F-D by Micron Technology

EDB4432BBBJ-1DAUT-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1DAUT-F-D is a PLASTIC/EPOXY DRAM with SYNCHRONOUS operating mode and SELF REFRESH capability. It has a memory density of 4294967296 bit and is commonly used in AUTOMOTIVE applications.
MT41K128M16JT-125XIT:KTR by Micron Technology

MT41K128M16JT-125XIT:KTR

Micron Technology

Micron Technology's MT41K128M16JT-125XIT:KTR is a DDR3L DRAM with 128MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices such as servers, PCs, and networking equipment.
M378A1K43CB2-CRC by Samsung

M378A1K43CB2-CRC

Samsung

Samsung M378A1K43CB2-CRC DDR4 DRAM Module features 1GX64 organization, operates at 1200 MHz clock frequency, and has a memory width of 64. Ideal for high-performance computing applications requiring synchronous operation and common I/O type with self-refresh capability.
MT48LC16M16A2P-6A by Micron Technology

MT48LC16M16A2P-6A

Micron Technology

MT48LC16M16A2P-6A by Micron Technology is a 16MX16 DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is used in commercial applications requiring synchronous memory ICs with a memory density of 268435456 bits.
MT40A256M16LY-062E:F by Micron Technology

MT40A256M16LY-062E:F

Micron Technology

Micron Technology's MT40A256M16LY-062E:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
MTA8ATF1G64HZ-3G2R1 by Micron Technology

MTA8ATF1G64HZ-3G2R1

Micron Technology

DDR4 DRAM MODULE;
MT46V16M16P-5BXIT:M by Micron Technology

MT46V16M16P-5BXIT:M

Micron Technology

Micron Technology's MT46V16M16P-5BXIT:M is a DDR1 DRAM with 16MX16 organization, 268435456 bit memory density, and 0.7 ns max access time. It operates synchronously at 2.6V and features self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices.
S27KS0642GABHI020 by Cypress Semiconductor

S27KS0642GABHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Functions: 1; Package Equivalence Code: BGA24,5X5,40;
MT53E256M16D1DS-046AAT:B by Micron Technology

MT53E256M16D1DS-046AAT:B

Micron Technology

Micron Technology's MT53E256M16D1DS-046AAT:B is a LPDDR4 DRAM with 256MX16 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial devices.
S27KS0642GABHB020 by Cypress Semiconductor

S27KS0642GABHB020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Technology: CMOS; Terminal Pitch: 1 mm;
S70KS1282GABHB030 by Infineon Technologies

S70KS1282GABHB030

Infineon Technologies

S70KS1282GABHB030 by Infineon Technologies is a 16MX8 DRAM with 1.8V supply voltage, operating at up to 200MHz clock frequency. It is designed for applications requiring high-speed synchronous memory, such as automotive electronics and industrial control systems.