Infineon Technologies - SFH483406

  1. Home
  2. Infineon Technologies - SFH483406
SFH483406 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SFH483406
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Current: 1.8 A; Maximum Operating Temperature: 60 Cel; Semiconductor Material: GaAlAs;
Datasheet SFH483406 Datasheet
In Stock988
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: 1.8 A
Peak Wavelength (nm): 809
Spectral Bandwidth: 2 m
Maximum Operating Temperature: 60 Cel
Semiconductor Material: GaAlAs
Sub-Category: Laser Diodes
Maximum Forward Voltage: 2.1 V
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -10 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
988 - -

Popular Products

Category Top Products

DL-3148-013 by Onsemi

DL-3148-013

Onsemi

DL-3148-013 by Onsemi is a LASER DIODE with Peak Wavelength of 635nm, Max Forward Current of 0.06A, and Max Forward Voltage of 2.5V. It operates b/w -10 °C to 40°C, suitable for THROUGH HOLE MOUNT applications in various industries.
NX8563LB413-CA by Renesas Electronics

NX8563LB413-CA

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Peak Wavelength (nm): 1541; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 65 Cel;
Q65113A2191 by Osram Opto Semiconductors

Q65113A2191

Osram Opto Semiconductors

Osram Opto Semiconductors' Q65113A2191 is a 940nm LASER DIODE with 6500W output power and 900mA threshold current. Ideal for applications requiring surface mount configuration, it operates b/w -20°C to 85°C temperatures.
NX8565LE606-BC by Renesas Electronics

NX8565LE606-BC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1561;
NX8560MC-BC by Renesas Electronics

NX8560MC-BC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1550; Maximum Forward Current: .15 A; Semiconductor Material: GaAs; Minimum Operating Temperature: 0 Cel;
SFH480443 by Infineon Technologies

SFH480443

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 200000 m; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -10 Cel;
OPV300 by Tt Electronics Plc

OPV300

Tt Electronics Plc

OPV300 by Tt Electronics Plc is a SINGLE LASER DIODE with 2.54mm size, emitting at 850nm peak wavelength. It operates b/w 0-70°C, with max forward current of 0.012A and nominal output power of 1.1W. Ideal for applications requiring precise optical alignment and high-power laser emission in compact spaces.
NX8563LB453-CA by Renesas Electronics

NX8563LB453-CA

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1545; Maximum Forward Current: .3 A;
TOLD125 by Toshiba

TOLD125

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .08 A; Peak Wavelength (nm): 780;
TOLD139 by Toshiba

TOLD139

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .115 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 830; Maximum Operating Temperature: 50 Cel;
DL-3149-057 by Onsemi

DL-3149-057

Onsemi

DL-3149-057 by Onsemi is a LASER DIODE with peak wavelength of 670nm. It has max forward current of 0.045A and max forward voltage of 2.6V. Ideal for applications requiring precise laser emission in temp range -10 to 60 °C, with through hole mounting feature.
CQF25C/D23 by NXP Semiconductors

CQF25C/D23

NXP Semiconductors

CQF25C/D23 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
TOLD321BAB by Toshiba

TOLD321BAB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1310; Maximum Response Time: .000000001 s; Maximum Operating Temperature: 65 Cel;
TOLD320AAA by Toshiba

TOLD320AAA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s;
NX8501CC-BA by Renesas Electronics

NX8501CC-BA

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .2 A; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP;
NX8567SA405-BC by Renesas Electronics

NX8567SA405-BC

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1540; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V;
NX8562LB606 by Renesas Electronics

NX8562LB606

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel; Maximum Forward Voltage: 1.5 V;
NX8570SC634-BA-AZ by Renesas Electronics

NX8570SC634-BA-AZ

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1563; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;
NX7563JB-BC-AZ by Renesas Electronics

NX7563JB-BC-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000002 s; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1550; Spectral Bandwidth: 6 m;
SDL5030-201 by Onsemi

SDL5030-201

Onsemi

SDL5030-201 by Onsemi is a GaAlAs LASER DIODE with peak wavelength of 790nm. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.