Infineon Technologies - SIGC04T60GE

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SIGC04T60GE by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC04T60GE
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Voltage: 20 V;
Datasheet SIGC04T60GE Datasheet
In Stock55
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 6 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -40 Cel
No. of Terminals: 2
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.9 V
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