Infineon Technologies - SIGC04T65EX1SA1

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SIGC04T65EX1SA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC04T65EX1SA1
Description N-CHANNEL; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 650 V; Maximum Gate-Emitter Threshold Voltage: 6.4 V;
Datasheet SIGC04T65EX1SA1 Datasheet
In Stock304
NAME DESCRIPTION
Maximum Collector Current (IC): 6 A
Maximum Collector-Emitter Voltage: 650 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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