Infineon Technologies - SIGC10T60SEX1SA1

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SIGC10T60SEX1SA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC10T60SEX1SA1
Description N-CHANNEL; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 600 V;
Datasheet SIGC10T60SEX1SA1 Datasheet
In Stock884
NAME DESCRIPTION
Maximum Collector Current (IC): 20 A
Maximum Collector-Emitter Voltage: 600 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage: 5.7 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
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