Infineon Technologies - SIGC10T65EX1SA1

SIGC10T65EX1SA1 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SIGC10T65EX1SA1
Description	N-CHANNEL; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Collector-Emitter Voltage: 650 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet	SIGC10T65EX1SA1 Datasheet
In Stock	781

SIGC10T65EX1SA1 Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	20 A
Maximum Collector-Emitter Voltage:	650 V
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage:	6.4 V
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Peak Reflow Temperature (C):	NOT SPECIFIED
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES

Pricing (USD)

Qty.	Unit Price	Ext. Price
781	-	-

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