Infineon Technologies - SIGC128T170R3

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SIGC128T170R3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC128T170R3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 100 A; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet SIGC128T170R3 Datasheet
In Stock855
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 100 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1700 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: S-XUUC-N
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
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