Infineon Technologies - SIGC28T65EX1SA1

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SIGC28T65EX1SA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC28T65EX1SA1
Description N-CHANNEL; Maximum Collector Current (IC): 50 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Voltage: 20 V;
Datasheet SIGC28T65EX1SA1 Datasheet
In Stock415
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Maximum Collector-Emitter Voltage: 650 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
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